PBRN113E Datasheet - NXP Semiconductors

NPN 800 mA 40 V BISS RETs

PBRN113E Features

* I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simpliﬁes circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in autom

PBRN113E General Description

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Package NXP PBRN113EK PBRN113ES[1] PBRN113ET [1] Type number JEITA SC-59A SC-43A - JEDEC TO-236 TO-92 TO-236AB SOT346 SOT54 SOT23 Also availa.

PBRN113E Datasheet (188.25 KB)

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Part number:

PBRN113E

Manufacturer:

NXP ↗ Semiconductors

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188.25 KB

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Npn 800 ma 40 v biss rets.
www.DataSheet4U.com PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 1 March 2007 Product data sheet 1. Product pr.

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PBRN113E NPN 800 BISS RETs NXP Semiconductors

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PBRN113E Features

PBRN113E General Description

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