PBRN113E Datasheet - NXP Semiconductors

PBRN113E NPN 800 mA 40 V BISS RETs

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Package NXP PBRN113EK PBRN113ES[1] PBRN113ET [1] Type number JEITA SC-59A SC-43A - JEDEC TO-236 TO-92 TO-236AB SOT346 SOT54 SOT23 Also availa.

PBRN113E Features

* I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simpliﬁes circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in autom

PBRN113E Datasheet (188.25 KB)