* I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in
PBRP123ET Datasheet (151.73 KB)
PBRP123ET
NXP ↗ Semiconductors
151.73 KB
Pnp 800 ma.
PBRP123ET PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 16 January 2008 Product data sheet 1. Product profile 1.1 General desc.
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