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PBRN123E Datasheet - NXP Semiconductors

NPN 800 mA 40 V BISS RETs

PBRN123E Features

* I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in autom

PBRN123E General Description

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Package NXP PBRN123EK PBRN123ES[1] PBRN123ET [1] Type number JEITA SC-59A SC-43A - JEDEC TO-236 TO-92 TO-236AB SOT346 SOT54 SOT23 Also availa.

PBRN123E Datasheet (188.65 KB)

Preview of PBRN123E PDF

Datasheet Details

Part number:

PBRN123E

Manufacturer:

NXP ↗ Semiconductors

File Size:

188.65 KB

Description:

Npn 800 ma 40 v biss rets.
www.DataSheet4U.com PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 27 February 2007 Product data sheet 1. Pr.

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Stock and price

part
Nexperia
PBRN123ET,215
4884 In Stock
Qty : 1000 units
Unit Price : $0.07

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PBRN123E NPN 800 BISS RETs NXP Semiconductors

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