PBRN123E Datasheet (NXP Semiconductors) - NPN 800 mA 40 V BISS RETs

PBRN123E, NPN 800 mA 40 V BISS RETs

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages.

Table 1.

Product overview Package NXP PBRN123EK PBRN123ES[1] PBRN123ET [1] Type number JEITA SC-59A SC-43A - JEDEC TO-236 TO-92 TO-236AB SOT346 SOT54 SOT23 Also availa

PBRN123E Features

* I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simpliﬁes circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in autom