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PBRN123E Datasheet - NXP Semiconductors

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PBRN123E NPN 800 mA 40 V BISS RETs

www.DataSheet4U.com PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev.01 * 27 February 2007 Product data sheet 1.Pr.
800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages.

PBRN123E_NXPSemiconductors.pdf

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Datasheet Details

Part number:

PBRN123E

Manufacturer:

NXP ↗ Semiconductors

File Size:

188.65 KB

Description:

NPN 800 mA 40 V BISS RETs

Applications

* I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads 1.4 Quick reference data Table 2. Symbol VCEO IO Quick reference data Parameter collector-emitter voltage output current PBRN123EK, PBRN123ET PBRN123ES Conditions open base [1] Min - T

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