* I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in
PBRP113ZT Datasheet (153.97 KB)
PBRP113ZT
NXP ↗ Semiconductors
153.97 KB
Pnp 800 ma.
PBRP113ZT PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 16 January 2008 Product data sheet 1. Product profile 1.1 General descrip.
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