* I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in auto
PBRN123ES Datasheet (705.18 KB)
PBRN123ES
705.18 KB
Npn ret.
PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 27 February 2007 Product data sheet 1. Product profile 1.1 .
📁 Related Datasheet
PBRN123E NPN RET (nexperia)
PBRN123E NPN 800 mA 40 V BISS RETs (NXP Semiconductors)
PBRN123EK NPN RET (nexperia)
PBRN123ET NPN RET (nexperia)
PBRN123Y NPN transistor (nexperia)
PBRN123YK NPN transistor (nexperia)
PBRN123YS NPN transistor (nexperia)
PBRN123YT NPN transistor (nexperia)
PBRN113E NPN RET (nexperia)
PBRN113E NPN 800 mA 40 V BISS RETs (NXP Semiconductors)
