PESD5V0V1BL Datasheet (NXP Semiconductors) - Very low capacitance bidirectional ESD protection diodes

PESD5V0V1BL, Very low capacitance bidirectional ESD protection diodes

Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from the damage caused by ESD and other transients.

Table 1.

Product overview Package NXP PESD5V0V1BA PESD5V0V1BB PESD5V0V1BL

PESD5V0V1BL Features

* I I I I I Bidirectional ESD protection of one line Very low diode capacitance: Cd = 11 pF Max. peak pulse power: PPP = 45 W Low clamping voltage: VCL = 12.5 V Ultra low leakage current: IRM < 1 nA I I I I ESD protection up to 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); IPP = 4.8 A AEC-