PESD5V0V4UG Datasheet (NXP Semiconductors) - Very low capacitance unidirectional quadruple ESD protection diode arrays

PESD5V0V4UG, Very low capacitance unidirectional quadruple ESD protection diode arrays

Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients.

Table 1.

Product overview Package NXP PESD3V3V4UF

PESD5V0V4UG Features

* I I I I ESD protection of up to four lines Very low diode capacitance Max. peak pulse power: PPP = 16 W Low clamping voltage: VCL = 11 V I I I I Ultra low leakage current: IRM = 25 nA ESD protection up to 12 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); IPP = 1.5 A 1.3 Applications I Compu