* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications
* D
PSMN023-40YLC Datasheet (215.42 KB)
PSMN023-40YLC
NXP ↗ Semiconductors
215.42 KB
Mosfet.
PSMN023-40YLC 22 August 2012 N-channel 40 V 23mΩ logic level MOSFET in LFPAK using NextPower technology Product data sheet 1. Product profile 1.1 G.
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