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PSMN020-150W N-channel TrenchMOS transistor

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Description

Philips Semiconductors Objective specification TrenchMOS™ transistor PSMN020-150W .
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

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Features

* ’Trench’ technology
* Very low on-state resistance
* Fast switching
* High thermal cycling performance

PSMN020-150W Distributors

📁 Related Datasheet

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PSMN020-150W N-channel TrenchMOS transistor Philips
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