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PSMN025-100HS N-Channel MOSFET

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Description

PSMN025-100HS N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 26 September 2022 Product data sheet 1.Ge.
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. High peak.

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Features

* High peak drain current IDM
* Copper clip and flexible Leads
* High operating junction temperature Tj = 175 °C
* Superior reliability

Applications

* Synchronous rectifier
* Forward and flyback converter
* Industrial drive
* Power management system
* Uninterruptible Power Supply (UPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min VDS drain-source voltage 25

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