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PSMN5R9-30YL

MOSFET

PSMN5R9-30YL Features

* High efficiency due to low switching and conduction losses

* Suitable for logic level gate drive sources 1.3 Applications

* Class-D amplifiers

* DC-to-DC converters

* Motor control

* Server power supplies 1.4 Quick reference data Table 1. Symbol VD

PSMN5R9-30YL General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits

* High efficiency due to low switching and conduction.

PSMN5R9-30YL Datasheet (245.82 KB)

Preview of PSMN5R9-30YL PDF

Datasheet Details

Part number:

PSMN5R9-30YL

Manufacturer:

NXP ↗ Semiconductors

File Size:

245.82 KB

Description:

Mosfet.
LF PA K PSMN5R9-30YL N-channel 6.1 mΩ 30 V TrenchMOS logic level FET in LFPAK Rev. 2

* 16 May 2011 Product data sheet 1. Product profile 1.1.

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TAGS

PSMN5R9-30YL MOSFET NXP Semiconductors

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