2N3866
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Silicon planar epitaxial overlay transistors.
DISCRETE SEMICONDUCTORS
DATA SHEET
2N3866; 2N4427 Silicon planar epitaxial overlay transistors
Product specification Supersedes data of August 1986 F.
📁 Related Datasheet
2N3863 - Silicon NPN Power Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.
2N3864 - NPN Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.
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isc Silicon NPN Power Transistor
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2N3866 - RF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS
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RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
2N3866 / 2N3866A
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor • Specified 400 MHz, 28Vdc .
2N3866 - NPN SILICON HIGH FREQUENCY TRANSISTOR
(Advanced Semiconductor)
2N3866
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39 DESCRIPTION:
The ASI 2N3866 is a High Frequency Transistor Designed for Amplifier an.
2N3866 - HIGH-FREQUENCY TRANSISTOR
(Motorola)
2N3866 2N3866A
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Devic.
2N3866 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Planar Epitaxial Overlay Transistor
2N3866
DESCRIPTION · High Gain Bandwidth Product
fT= 500 MHz (Min.)
· Low Collector Capacitance;.
2N3866 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
(Advanced Power Technology)
2N3866 / 2N3866A
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc C.
