74AHC2G00 Datasheet - NXP

74AHC2G00 high-speed Si-gate CMOS device

The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device. The 74AHC2G/AHCT2G00 provides the 2-input NAND gate function. TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequenc.

74AHC2G00 Features

* Symmetrical output impedance

* High noise immunity

* ESD protection:

* HBM EIA/JESD22-A114-A exceeds 2000 V

* MM EIA/JESD22-A115-A exceeds 200 V

* CDM EIA/JESD22-C101 exceeds 500 V.

* Low power dissipation

* Balanced propagation delay

74AHC2G00_PhilipsSemiconductors.pdf