* High Terminal Impedances for Optimal Broadband Performance
* Designed for Digital Predistortion Error Correction Systems
* Optimized for Doherty Applications A2G35S200
* 01SR3 3400
* 3600 MHz, 40 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR NI
* 400S
* 2S RFi
A2G35S200-01SR3 Datasheet (330.12 KB)
A2G35S200-01SR3
330.12 KB
Rf power gan transistor.
Freescale Semiconductor Technical Data
Document Number: A2G35S200
*01S Rev. 0, 5/2016
RF Power GaN Transistor
This 40 W RF power GaN transis.
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