Datasheet Specifications
- Part number
- A2G35S200-01SR3
- Manufacturer
- NXP ↗
- File Size
- 330.12 KB
- Datasheet
- A2G35S200-01SR3-NXP.pdf
- Description
- RF Power GaN Transistor
Description
Freescale Semiconductor Technical Data Document Number: A2G35S200 *01S Rev.0, 5/2016 RF Power GaN Transistor This 40 W RF power GaN transis.
Features
* High Terminal Impedances for Optimal Broadband PerformanceApplications
* requiring very wide instantaneous bandwidth covering the frequency range of 3400 to 3600 MHz. This part is characterized and performance is guaranteed for applications operating in the 3400 to 3600 MHz band. There is no guarantee of performance when this part is used in applications designed outsideA2G35S200-01SR3 Distributors
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