A2G35S200-01SR3 Datasheet - NXP

A2G35S200-01SR3 RF Power GaN Transistor

Freescale Semiconductor Technical Data Document Number: A2G35S200 01S Rev. 0, 5/2016 RF Power GaN Transistor This 40 W RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth covering the frequency range of 3400 to 3600 MHz. This part is characterized and performance is guaranteed for applications operating in the 3400 to 3600 MHz band. There is no guarantee of performance when this part is used in applications designed ou.

A2G35S200-01SR3 Features

* High Terminal Impedances for Optimal Broadband Performance

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications A2G35S200

* 01SR3 3400

* 3600 MHz, 40 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR NI

* 400S

* 2S RFi

A2G35S200-01SR3 Datasheet (330.12 KB)