A3M37TL039 Datasheet - NXP

A3M37TL039 - Power Amplifier

Pin Number 1, 13, 14, 15, 16, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27 2, 12 3 4 5 6 7 8 9 10 11 17 Pin Function GND N.C.

VDC2 VDC1 RFin VGP2 VGP1 VGC1 VGC2 VDP1 VDP2 RFout Pin Description Ground No Connection Carrier Drain Supply, Stage 2 Carrier Drain Supply, Stage 1 RF Input Peaking Gate Supply,

NXP Semiconductors Technical Data Power Amplifier Module for LTE and 5G The A3M37TL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint.

Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads.

The field proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.

3600 3800 MHz Typical LTE Performance: Pout =

A3M37TL039 Features

* Frequency: 3600

* 3800 MHz

* Advanced high performance in

* package Doherty

* Fully matched (50 ohm input/output, DC blocked)

* Designed for low complexity analog or digital linearization systems Document Number: A3M37TL039 Rev. 2, 12/2020 A3M37TL039 3600

* 3800

A3M37TL039-NXP.pdf