A3T09S100N Datasheet - NXP

A3T09S100N Airfast RF Power LDMOS Transistor

A3T09S100N Airfast RF Power LDMOS Transistor Rev. 0 March 2021 Designed for two way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large signal, common source amplifier applications in radio equipment. Typical Single Carrier W CDMA Production Fixture Performance: VDD = 28 Vdc, IDQ = 450 mA, Pout = 15 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probabilit.

A3T09S100N Features

* Characterized for operation from 136 to 941 MHz

* Unmatched input and output allowing wide frequency range utilization

* Integrated ESD protection

* Wideband

* full power across each mobile radio band

* Exceptional thermal performance

* High linearity for: TETRA, SS

A3T09S100N-NXP.pdf