A3T21H360W23SR6 Datasheet - NXP

datasheet Preview Page 1 from Datasheet4u.com

A3T21H360W23SR6 RF Power LDMOS Transistor

NXP Semiconductors Technical Data Document Number: A3T21H360W23S Rev.0, 08/2017 RF Power LDMOS Transistor N *Channel Enhancement *Mod.

A3T21H360W23SR6-NXP.pdf

A3T21H360W23SR6 Datasheet Preview — Preview of A3T21H360W23SR6 PDF

Datasheet Details

Part number:

A3T21H360W23SR6

Manufacturer:

NXP ↗

File Size:

395.02 KB

Description:

RF Power LDMOS Transistor

Features

* Advanced high performance in
* package Doherty

Applications

* requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz. 2100 MHz
* Typical Doherty Single
* Carrier W
* CDMA Performance: VDD = 28 Vdc, IDQA = 600 mA, VGSB = 0.6 Vdc, Pout = 56 W Avg. , Input Signal PAR = 9.9 dB @ 0.01% Probability on

A3T21H360W23SR6 Distributors

📁 Related Datasheet

📌 All Tags

A3T21H360W23SR6 Power LDMOS Transistor NXP

NXP A3T21H360W23SR6-like datasheet

A3T21H456W23SR6

A3T09S100N