A3T21H360W23SR6 RF Power LDMOS Transistor

NXP

Description

NXP Semiconductors Technical Data Document Number: A3T21H360W23S Rev.0, 08/2017 RF Power LDMOS Transistor N *Channel Enhancement *Mod.

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Datasheet Specifications

Part number: A3T21H360W23SR6
Manufacturer: NXP ↗
File Size: 395.02 KB
Datasheet: A3T21H360W23SR6-NXP.pdf
Description: RF Power LDMOS Transistor

Features

* Advanced high performance in
* package Doherty

Applications

* requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz. 2100 MHz
* Typical Doherty Single
* Carrier W
* CDMA Performance: VDD = 28 Vdc, IDQA = 600 mA, VGSB = 0.6 Vdc, Pout = 56 W Avg. , Input Signal PAR = 9.9 dB @ 0.01% Probability on

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