A3T21H456W23SR6 Datasheet - NXP

A3T21H456W23SR6 N-Channel MOSFET

NXP Semiconductors Technical Data Document Number: A3T21H456W23S Rev. 1, 08/2018 RF Power LDMOS Transistor N Channel Enhancement Mode Lateral MOSFET This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz. 2100 MHz Typical Doherty Single Carrier W CDMA Performance: VDD = 30 Vdc, IDQA = 800 mA, VGSB =.

A3T21H456W23SR6 Features

* Advanced high performance in

* package Doherty

* Designed for wide instantaneous bandwidth applications

* Greater negative gate

* source voltage range for improved Class C operation

* Able to withstand extremely high output VSWR and broadband operating conditions

A3T21H456W23SR6 Datasheet (666.05 KB)