BAT56 Datasheet - NXP

BAT56, Schottky barrier diode

DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary speciﬁcation File under Discrete Semiconductors, SC01 December 1993 Phi.
Silicon epitaxial Schottky barrier diode with an integrated guard ring for stress protection.

Features

* Low leakage current
* Low turn-on and high breakdown voltage

Applications

* The diode is encapsulated in a SOD123 SMD plastic package. k a BAT56 QUICK REFERENCE DATA SYMBOL VR IF VF IR Tj Cd PARAMETER continuous reverse voltage continuous forward current forward voltage reverse current junction temperature diode capacitance VR = 1 V IF = 1 mA VR = 60 V CONDITIONS MAX. 60

BAT56_PhilipsSemiconductors.pdf