Datasheet4U Logo Datasheet4U.com

BF410C - N-channel silicon field-effect transistors

Datasheet Summary

Description

Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range.

These FETs can be supplied in four IDSS groups.

Features

  • are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for.

📥 Download Datasheet

Datasheet preview – BF410C

Datasheet Details

Part number BF410C
Manufacturer NXP
File Size 36.05 KB
Description N-channel silicon field-effect transistors
Datasheet download datasheet BF410C Datasheet
Additional preview pages of the BF410C datasheet.

📁 Similar Datasheet

  • BF410C - LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR (Siemens Semiconductor Group)
  • BF410 - LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR (Siemens Semiconductor Group)
  • BF410A - LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR (Siemens Semiconductor Group)
  • BF410B - LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR (Siemens Semiconductor Group)
  • BF410D - LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR (Siemens Semiconductor Group)
  • BF414 - NPN Silicon RF Transistor (Siemens Semiconductor Group)
  • BF41A1M - SAW filter (SHOULDER ELECTRONICS)
  • BF401M - SMD Gas Discharge Tube (LangTuo)
  • BF420 - High Voltage Transistors (Motorola Inc)
  • BF420 - NPN Silicon Transistors (Siemens Semiconductor Group)
Other Datasheets by NXP
  • BF410A - N-channel silicon field-effect transistors
  • BF410B - N-channel silicon field-effect transistors
  • BF410D - N-channel silicon field-effect transistors
  • BF419 - NPN high-voltage transistor
  • BF420 - NPN high-voltage transistors
  • BF421 - PNP high-voltage transistors
  • BF421L - (BF421L / BF423L) PNP high-voltage transistors
  • BF422 - NPN high-voltage transistors

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1990 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for applications such as the RF stages in FM portables (type A), car radios (type B) and mains radios (type C) or the mixer stage (type D).
Published: |