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BFQ135 - NPN 6.5 GHz wideband transistor

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BFQ135 Product details

Description

NPN wideband transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. UNIT V mA W GHz dB dB V maximum unilateral power gain IC = 120 mA ; VCE = 18 V; f = 500 MHz; Tamb = 25 °C IC = 120 mA; VCE = 18 V; f = 800 MHz; Tamb = 25 °C VO output voltage dim =

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