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BFQ67W NPN 8 GHz wideband transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BFQ67W NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995.
NPN transistor in a plastic SOT323 envelope.

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Features

* High power gain
* Low noise figure
* High transition frequency
* Gold metallization ensures excellent reliability

Applications

* such as satellite TV tuners and RF portable communications equipment up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral

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