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BFQ68 NPN 4 GHz wideband transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BFQ68 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 .
NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap.

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Features

* very high output voltage capabilities. It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT Vo PARAMETER collector-emitter voltage collector current total power dissipation

Applications

* These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to ful

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