BFR505T Datasheet - NXP

BFR505T NPN 9 GHz wideband transistor

NPN transistor in a plastic SOT416 (SC-75) package. fpage 3 DESCRIPTION 1 Top view 2 MBK090 Fig.1 SOT416. MAX. 20 15 18 150 250 * * 1.7 UNIT V V mA mW GHz dB dB IC = 5 mA; VCE = 6 V; f = 900 MHz; * Tamb = 25 °C IC = 1.25 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C <.

BFR505T Features

* Low current consumption

* High power gain

* Low noise figure

* High transition frequency

* Gold metallization ensures excellent reliability

* SOT416 (SC-75) package. APPLICATIONS Low power amplifiers, oscillators and mixers particularly in RF portabl

BFR505T_PhilipsSemiconductors.pdf