BLF578XRS Description
BLF578XR; BLF578XRS Power LDMOS transistor Rev.4 * 12 July 2013 Product data sheet 1.Product profile 1.1 General .BLF578XRS Features
* Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %:BLF578XRS Applications
* in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance. Table 1. Application information Test signal pulsed RF f (MHz) 225 VDS PL (V) (W)
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