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BLT13 - UHF power transistor

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1 4 MAM227 handbook, halfpage 8 BLT13 DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package.5 c b e Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit.MODE OF OPERATION Pulsed, class-AB f (MHz) 1800 VCE (V) 6 PL (W) 2 Gp (dB) ≥6 ηC (%) ≥50 1996 Apr 12 2 Philips Semiconductors Preliminary specification UHF power transistor LIMITING VALUES In accordance with the Absolute

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