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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW60C VHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. Matched hFE groups are available on request. It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.
BLW60C
QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) VCC V 12,5 f MHz 175 PL W 45 GL dB > 5,0 η % > 75 typ.
BLW60 Datasheet
