Datasheet4U Logo Datasheet4U.com

BLW30 - VHF power transistor

Datasheet Summary

Description

NPN silicon planar epitaxial transistor encapsulated in a 4-lead 3⁄8 inch SOT120 capstan envelope with a ceramic cap.

It is designed for common emitter, class-B operation mobile VHF transmitters with a supply voltage of 12.5 V.

All leads are isolated from the stud.

Features

  • Emitter-ballasting resistors for an optimum temperature profile.
  • Excellent reliability.
  • Withstands full load mismatch.

📥 Download Datasheet

Datasheet preview – BLW30

Datasheet Details

Part number BLW30
Manufacturer NXP
File Size 72.11 KB
Description VHF power transistor
Datasheet download datasheet BLW30 Datasheet
Additional preview pages of the BLW30 datasheet.

📁 Similar Datasheet

  • BLW31 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
  • BLW34 - NPN SILICON RF POWER TRANSISTOR (ASI)
  • BLW75 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
  • BLW81 - UHF power transistor (ELEFLOW TECHNOLOGIES)
  • BLW81 - NPN SILICON RF POWER TRANSISTOR (ASI)
  • BLW86 - NPN SILICON RF POWER TRANSISTOR (ASI)
Other Datasheets by NXP
  • BLW32 - UHF linear power transistor
  • BLW33 - UHF linear power transistor
  • BLW34 - UHF linear power transistor
  • BLW29 - VHF power transistor
  • BLW50F - HF/VHF power transistor
  • BLW60 - VHF power transistor
  • BLW60C - VHF power transistor
  • BLW76 - HF/VHF power transistor

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BLW30 VHF power transistor Product specification September 1991 Philips Semiconductors Product specification VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Excellent reliability • Withstands full load mismatch. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead 3⁄8 inch SOT120 capstan envelope with a ceramic cap. It is designed for common emitter, class-B operation mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the stud. PINNING - SOT120 PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 3 handbook, halfpage halfpage BLW30 QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION c.w.
Published: |