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BLW50F - HF/VHF power transistor

Datasheet Summary

Description

N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f.

and v.h.f.

band.

Features

  • tatus Objective specification Preliminar.

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Datasheet Details

Part number BLW50F
Manufacturer NXP
File Size 75.58 KB
Description HF/VHF power transistor
Datasheet download datasheet BLW50F Datasheet
Additional preview pages of the BLW50F datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLW50F HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides protection against device damage at severe load mismatch conditions. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. BLW50F QUICK REFERENCE DATA R.F. performance MODE OF OPERATION s.s.b. (class-A) s.s.b. (class-AB) Note 1. At 65W P.E.P. PIN CONFIGURATION halfpage VCE V 45 50 f MHz 1,6 - 28 1,6 - 28 PL W 0 - 16 (P.E.P.
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