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BLW90 UHF power transistor

BLW90 Description

DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF po.
N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.

BLW90 Applications

* in class-A, B or C in the u. h. f. and v. h. f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization. The transistor is housed in a 1⁄4" capstan

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