BLW97 HF power transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product speciﬁcation August 1986 Philips Semiconductors Product speciﬁcation HF powe.
N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power industrial and military transmitting equipment in.

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Datasheet Specifications

Part number: BLW97
Manufacturer: NXP ↗
File Size: 73.81 KB
Datasheet: BLW97_PhilipsSemiconductors.pdf
Description: HF power transistor

Applications

* It is resistance stabilized and is made to withstand severe load-mismatch conditions. All leads are isolated from the flange. The transistors are supplied in matched hFE groups. BLW97 QUICK REFERENCE DATA R. F. performance up to Th = 25 °C MODE OF OPERATION s. s. b. (class-AB) PIN CONFIGURATION VCE

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