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BLW97 HF power transistor

BLW97 Description

DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification August 1986 Philips Semiconductors Product specification HF powe.
N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power industrial and military transmitting equipment in.

BLW97 Applications

* It is resistance stabilized and is made to withstand severe load-mismatch conditions. All leads are isolated from the flange. The transistors are supplied in matched hFE groups. BLW97 QUICK REFERENCE DATA R. F. performance up to Th = 25 °C MODE OF OPERATION s. s. b. (class-AB) PIN CONFIGURATION VCE

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