BSP205 P-channel enhancement mode vertical D-MOS transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BSP205 P-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconducto.
P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer dri.

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Datasheet Specifications

Part number: BSP205
Manufacturer: NXP ↗
File Size: 65.60 KB
Datasheet: BSP205_PhilipsSemiconductors.pdf
Description: P-channel enhancement mode vertical D-MOS transistor

Features

* Very low RDS(on)
* Direct interface to C-MOS, TTL, etc.
* High-speed switching
* No secondary breakdown PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain PIN CONFIGURATION Marking code BSP205 QUICK REFERENCE DATA Drain-source voltage Drain current (DC) Drain-

Applications

* BSP205 This data sheet contains target or goal speciﬁcations for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains ﬁnal product speciﬁcations. These products are not designed for use in life support appliances, devi

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BSP205 P-channel enhancement mode vertical D-MOS transistor NXP

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