BSP225 - P-channel enhancement mode vertical D-MOS transistor

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NXP

BSP225 P-channel enhancement mode vertical D-MOS transistor by NXP - Datasheet Preview — Datasheet preview – BSP225

Datasheet Details

Part number	BSP225
Manufacturer	NXP
File Size	76.75 KB
Description	P-channel enhancement mode vertical D-MOS transistor
Datasheet	BSP225 Datasheet
Additional preview pages of the BSP225 datasheet.

Product details

Description

P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope, intended for use in relay, high-speed and line transformer drivers. VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage DC value ID = 200 mA VGS = 10 V ID = 1 mA VGS = VDS COND

Features

Low RDS(on).
Direct interface to C-MOS, TTL, etc.
High-speed switching.
No secondary breakdown.

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Published: Mar 23, 2005 |