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BUK451-100A PowerMOS transistor

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Description

Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.

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Applications

* QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK451 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -100A 100 3.0 40 175 0.85 MAX. -100B 100 3.0 40 175 1.1 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab ga

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