BUK452-100A Datasheet, Transistor, NXP

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BUK452-100A

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NXP ↗

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📄 Datasheet

Description:

Powermos transistor. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power

Datasheet Preview: BUK452-100A 📥 Download PDF (56.31kb)
Page 2 of BUK452-100A Page 3 of BUK452-100A

BUK452-100A Application

  • Applications QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK452 Drain-source voltage Drain current (DC) Total power dissipation J

TAGS

BUK452-100A
PowerMOS
transistor
NXP

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Stock and price

Philips Semiconductors
POWERMOS TRANSISTOR Power Field-Effect Transistor, 11A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ComSIT USA
BUK452100A
15950 In Stock
0
Unit Price : $0
No Longer Stocked
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