BUK452-100A PowerMOS transistor

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor BUK452-100A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.

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Datasheet Specifications

Part number: BUK452-100A
Manufacturer: NXP ↗
File Size: 56.31 KB
Datasheet: BUK452-100A_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK452 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -100A 100 11 60 175 0.25 MAX. -100B 100 10 60 175 0.3 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gate

BUK452-100A Distributors

📁 Related Datasheet

BUK453-100A BUK453-100B BUK453-60A BUK453-60B BUK454-200A BUK454-200B

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BUK452-100A PowerMOS transistor NXP

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