BUK453-60A
Inchange Semiconductor
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N-channel mosfet transistor.
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BUK453-60A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power tr.
BUK453-60B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power tr.
BUK453-60B - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
BUK453-60A/B
DESCRIPTION ·Drain Source Voltage-
: VDSS=60V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-L.
BUK453-100A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK453-100A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK453-100B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK453-100B - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK451-100A - PowerMOS transistor
(NXP)
Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect pow.
BUK451-100B - PowerMOS transistor
(NXP)
Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect pow.
BUK452-100A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK452-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
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