BUK453-100B PowerMOS transistor

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor BUK453-100A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.

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Datasheet Specifications

Part number: BUK453-100B
Manufacturer: NXP ↗
File Size: 74.44 KB
Datasheet: BUK453-100B_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK453 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -100A 100 14 75 175 0.16 MAX. -100B 100 13 75 175 0.20 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gat

BUK453-100B Distributors

📁 Related Datasheet

BUK452-100A BUK452-100B BUK452-60A BUK452-60B BUK454-200A BUK454-200B

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BUK453-100B PowerMOS transistor NXP

NXP BUK453-100B-like datasheet