BUK454-200A
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Powermos transistor. N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The de
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BUK454-200A - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK454-200B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK454-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK454-200B - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK454-60H - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor
BUK454-60H
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power tran.
BUK454-800A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK454-800A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK454-800A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=800V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK454-800B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK454-800A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK454-800B - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=800V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK451-100A - PowerMOS transistor
(NXP)
Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect pow.
BUK451-100B - PowerMOS transistor
(NXP)
Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect pow.
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