BUK555-200A Datasheet, Fet, NXP

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BUK555-200A

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NXP ↗

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📄 Datasheet

Description:

Powermos transistor logic level fet. N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switche

BUK555-200A Application

• Applications BUK555-200A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK555 Drain-source voltage Drain current (DC) Total powe

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BUK555-200A

NXP

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