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BUK555-200A PowerMOS transistor Logic level FET

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Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

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Applications

* BUK555-200A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK555 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -200A 200 14 125 175 0.23 MAX. -200B 200 13 125 175 0.28 UNIT V A W ˚C Ω PINNING

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PowerMOS transistor Logic level FET NXP
NXP BUK555-200A-like datasheet