BUK714R1-40BT

TrenchMOS standard level FET

NXP

BUK714R1-40BT Features

* s Integrated temperature sensor s Very low on-state resistance s Q101 compliant s 175 °C rated. 1.3 Applications s Electrical Power Assisted Steering s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s s RDSon = 3.4 mΩ (typ) VDS ≤ 40 V s ID ≤ 75

BUK714R1-40BT General Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. The devices include TrenchPLUS diodes for over-temperature protection. Product availability: BUK714R1-40BT in SOT426 (D2-PAK) BUK794R1-40BT in SOT263B (.

BUK714R1-40BT Datasheet (142.83 KB)