Datasheet4U Logo Datasheet4U.com

BUK78150-55 - TrenchMOS transistor Standard level FET

BUK78150-55 Description

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

BUK78150-55 Applications

* BUK78150-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 5.5 1.8 150 150 UNIT V A W ˚C mΩ PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab)

📥 Download Datasheet

Preview of BUK78150-55 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BUK78150-55A - N-channel TrenchMOS standard level FET (NXP Semiconductors)
  • BUK7880-55A - N-channel TrenchMOS standard level FET (NXP Semiconductors)
  • BUK7207-30B - TrenchMOS standard level FET (NXP Semiconductors)
  • BUK7208-40B - TrenchMOS standard level FET (NXP Semiconductors)
  • BUK7210-55B - N-Channel MOSFET (NXP Semiconductors)
  • BUK72150-55A - N-channel TrenchMOS standard level FET (nexperia)
  • BUK7222-55A - TrenchMOS standard level FET (NXP Semiconductors)
  • BUK7225-55A - TrenchMOS standard level FET (NXP Semiconductors)

📌 All Tags

TrenchMOS transistor Standard level FET NXP
NXP BUK78150-55-like datasheet