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Philips Semiconductors
TrenchMOS transistor Logic level FET
Product specification
BUK95150-55A BUK96150-55A
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications.
PINNING
TO220AB & SOT404
PIN DESCRIPTION
1 gate
2 drain
3 source
tab/mb drain
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS ID Ptot Tj RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 5 V VGS = 10 V
MAX.
BUK95150-55A Datasheet
