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LLE16120X NPN microwave power transistor

LLE16120X Description

DISCRETE SEMICONDUCTORS DATA SHEET LLE16120X NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Phili.
handbook, 4 columns 1 c b 3 e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange pac.

LLE16120X Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
* Gold metallization realizes very good stability of the characteristics and excellent lifetime
* Multi

LLE16120X Applications

* Intended for use in common emitter, class AB power amplifiers in CW conditions for professional applications at 1.65 GHz. 2 LLE16120X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.65 VCE (V) 24 ICQ (A)

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