LLE16350X Datasheet - NXP

LLE16350X NPN microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. Top view handbook, 4 columns LLE16350X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB ampliﬁer. MODE OF OPERATIO.

LLE16350X Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Interdigitated structure provides high emitter efficiency

* Gold metallization realizes very good stability of the characteristics and excellent lifetime

* Multi

LLE16350X Datasheet (103.66 KB)