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LLE18100X NPN silicon planar epitaxial microwave power transistor

LLE18100X Description

DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product speciļ¬cation November 1994 Philips Sem.
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.

LLE18100X Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
* Gold metallization realizes very good stability of the characteristics and excellent lifetime
* Multi

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NPN silicon planar epitaxial microwave power transistor NXP
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