LLE18100X

NPN silicon planar epitaxial microwave power transistor

NXP

LLE18100X Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Interdigitated structure provides high emitter efficiency

* Gold metallization realizes very good stability of the characteristics and excellent lifetime

* Multi

LLE18100X General Description

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB ampliﬁer. MODE OF OPERATION class AB (CW) f (GHz) 1.85 VCE (V) 24 .

LLE18100X Datasheet (60.61 KB)

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LLE18100X

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NXP ↗

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60.61 KB

Description:

Npn silicon planar epitaxial microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product speciﬁcation November 1994 Philips Sem.

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LLE18100X NPN silicon planar epitaxial microwave power transistor NXP

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LLE18100X General Description

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