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LLE18300X NPN microwave power transistor

LLE18300X Description

DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18300X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr .
2 handbook, 4 columns LLE18300X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.

LLE18300X Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
* Gold metallization realizes very good stability of the characteristics and excellent lifetime
* Multicell geome

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