LLE18300X

NPN microwave power transistor

NXP

LLE18300X Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Interdigitated structure provides high emitter efficiency

* Gold metallization realizes very good stability of the characteristics and excellent lifetime

* Multicell geome

LLE18300X General Description

2 handbook, 4 columns LLE18300X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB ampliﬁer. MODE OF OPERATION f (GHz) VCE (V) 24 ICQ (A) 0.1 PL1 (W) ≥27 Gpo (dB) ≥7.8 ηC (%) Zi; ZL (Ω) Class AB (CW) 1.85 typ. 40 see Figs 8 and 9 PINNING - SOT437A PIN 1 2 .

LLE18300X Datasheet (89.45 KB)

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LLE18300X

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NXP ↗

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Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18300X NPN microwave power transistor Product speciﬁcation Supersedes data of September 1994 1999 Apr .

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LLE18300X NPN microwave power transistor NXP

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LLE18300X General Description

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