Datasheet Details
- Part number
- MHT1008N
- Manufacturer
- NXP ↗
- File Size
- 400.00 KB
- Datasheet
- MHT1008N-NXP.pdf
- Description
- RF Power LDMOS Transistor
MHT1008N Description
Freescale Semiconductor Technical Data Document Number: MHT1008N Rev.0, 5/2016 RF Power LDMOS Transistor N *Channel Enhancement *Mode.
MHT1008N Features
* Characterized with series equivalent large
* signal impedance parameters and
common source S
* parameters
* Qualified for operation at 32 Vdc
* Integrated ESD protection
* 150C case operating temperature
MHT1008N Applications
* operating in the 2450 MHz ISM band. Typical Performance: VDD = 28 Vdc, IDQ = 110 mA
Frequency (MHz)
Signal Type
Gps (dB)
PAE (%)
Pout (W)
2400
CW
18.5
57.5
12.5
2450
18.6
56.3
12.5
2500
18.3
55.6
12.5
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
2450
CW
> 5:1
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