MHT1008N RF Power LDMOS Transistor

NXP

Description

Freescale Semiconductor Technical Data Document Number: MHT1008N Rev.0, 5/2016 RF Power LDMOS Transistor N *Channel Enhancement *Mode.

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Datasheet Specifications

Part number: MHT1008N
Manufacturer: NXP ↗
File Size: 400.00 KB
Datasheet: MHT1008N-NXP.pdf
Description: RF Power LDMOS Transistor

Features

* Characterized with series equivalent large
* signal impedance parameters and common source S
* parameters
* Qualified for operation at 32 Vdc
* Integrated ESD protection
* 150C case operating temperature

Applications

* operating in the 2450 MHz ISM band. Typical Performance: VDD = 28 Vdc, IDQ = 110 mA Frequency (MHz) Signal Type Gps (dB) PAE (%) Pout (W) 2400 CW 18.5 57.5 12.5 2450 18.6 56.3 12.5 2500 18.3 55.6 12.5 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR 2450 CW > 5:1

MHT1008N Distributors

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MHT1008N Power LDMOS Transistor NXP

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