MHT1008N Datasheet - NXP

MHT1008N RF Power LDMOS Transistor

Freescale Semiconductor Technical Data Document Number: MHT1008N Rev. 0, 5/2016 RF Power LDMOS Transistor N Channel Enhancement Mode Lateral MOSFET This 12.5 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band. Typical Performance: VDD = 28 Vdc, IDQ = 110 mA Frequency (MHz) Signal Type Gps (dB) PAE (%) Pout (W) 2400 CW 18.5 57.5 12.5 2450 18.6 56.3 12.5 2500 18.3 55.6 12.5 .

MHT1008N Features

* Characterized with series equivalent large

* signal impedance parameters and common source S

* parameters

* Qualified for operation at 32 Vdc

* Integrated ESD protection

* 150C case operating temperature

* 150C die temperature capability Target Applications

MHT1008N Datasheet (400.00 KB)