PDTC124ET Datasheet - NXP

NPN resistor-equipped transistor

PDTC124ET Features

* Built-in bias resistors R1 and R2 (typ. 22 kΩ each)

* Simplification of circuit design

* Reduces number of components and boardspace. APPLICATIONS

* Especially suitable for space reduction in interface and driver circuits

* Inverter circuit configurations wi

PDTC124ET General Description

NPN resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTA124ET. 1 3 2 1 Top view 2 MAM097 PDTC124ET handbook, 4 columns 3 3 R1 1 R2 2 Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER PDTC124ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. M.

PDTC124ET Datasheet (712.64 KB)

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Datasheet Details

Part number:

PDTC124ET

Manufacturer:

NXP ↗

File Size:

712.64 KB

Description:

Npn resistor-equipped transistor.
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC124ET NPN resistor-equipped transistor Product speciﬁcation Supersedes data of 1998 May.

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PDTC124ET NPN resistor-equipped transistor NXP

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PDTC124ET Features

PDTC124ET General Description

Datasheet Details

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