PHB13N40E PowerMOS transistors Avalanche energy rated

NXP

Description

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.

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Datasheet Specifications

Part number: PHB13N40E
Manufacturer: NXP ↗
File Size: 104.85 KB
Datasheet: PHB13N40E_PhilipsSemiconductors.pdf
Description: PowerMOS transistors Avalanche energy rated

Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHP13N40E, PHB13N40E, PHW13N40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V g ID = 13.7 A RDS(ON) ≤ 0.35 Ω s GENERA

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PHB13N40E PowerMOS transistors Avalanche energy rated NXP

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