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PHB130N03LT - TrenchMOS transistor Logic level FET

Datasheet Summary

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.

Features

  • very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching.

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Datasheet Details

Part number PHB130N03LT
Manufacturer NXP
File Size 63.37 KB
Description TrenchMOS transistor Logic level FET
Datasheet download datasheet PHB130N03LT Datasheet
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Full PDF Text Transcription

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHB130N03LT QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC)1 Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX.
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